t4 - lds -0 310 , rev . 1 ( 8/ 9 /13 ) ?201 3 microsemi corporation page 1 of 6 2n6298 and 2n6299 available on commercial versions pnp darlington power silicon transistor qualified per mil - prf - 19500/540 qualified levels : jan, jantx, and jantxv description this high speed pnp tra nsistor is rated at 8 amps and is military qualified up to a jantxv level. this to - 213aa isolated package features a 180 degree lead orientation. to -2 13 aa (to - 66 ) package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n62 98 and 2n62 99 ? hermetically sealed ? jan, jantx, and jantxv qualification s are available per mil - prf - 19500/ 5 40 ? rohs compliant versions available (commercial grade only) applica tions / benefits ? convenient package ? mechanically rugged ? military, space and other high reliability applications maximum ratings @ 25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -6 5 to + 175 o c thermal resistance junc tion - to - case r ? jc 2 .33 o c collector - base voltage 2n6 298 2n6 299 v cbo - 60 - 80 v collector - emitter voltage 2n6298 2n6299 v ceo - 60 - 80 v emitter - base voltage v ebo -5 v continuous operating collector current i c -8 a base current i b - 120 ma total power dissipation (1) @ t c = + 25 oc @ t c = + 100 oc p t 64 32 w notes: 1. derate linearly at 0. 428 w/ oc above t c > + 25 oc . downloaded from: http:///
t4 - lds -0 310 , rev . 1 ( 8/ 9 /13 ) ?201 3 microsemi corporation page 2 of 6 2n6298 and 2n6299 mechanical and packaging ? case: hermetic, to - 213aa package. nickel plate with n ickel cap. ? terminals: solder dipped (sn63/pb37) over nickel plated a lloy 52. rohs compliant m atte -t in plating is also available. ? marking: msc , part number , date code , p olarity s ymbol ? weight: approximately 5 .7 grams ? see package dimensions on last page. part nomenclature jan 2n6298 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (s ee electrical characteristics t able ) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition i b base curren t : the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. t c case temperature: the temperature measured at a specified location on the case of a device. v cb collector - base voltage : the dc voltage between the collector and the base. v cbo collector - base voltage, base open : the voltage between the collector and base terminals when the emitter termina l is open - circuited . v cc collector - supply voltage : the supply voltage applied to a circuit connected to the collector. v ceo collector - emitter voltage, base open: the voltage between the collector and the emitter terminals when the base terminal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base. v ebo emitter - base voltage, collector open: the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -0 310 , rev . 1 ( 8/ 9 /13 ) ?201 3 microsemi corporation page 3 of 6 2n6298 and 2n6299 electrical characteristi cs @ 25 oc unless otherwise stated parameters / test conditions symbol min. max. unit on characteristics (1) collector - emitter breakdown voltage i c = - 100 ma 2n6298 2n6299 v (br)ceo - 60 - 80 v collector - emitter cutoff current v ce = - 60 , v be = 1.5 v v ce = - 80 , v be = 1.5 v 2n6298 2n6299 i cex 10 a collector - emitter cutoff current, base open v ce = - 30 v v ce = - 40 v 2n6298 2n6299 i ceo - 0.5 ma emitter - base cutoff current v eb = - 5 v i ebo -2 .0 ma forward current transfer ratio i c = -1 a, v ce = -3 v i c = -4 a, v ce = -3 v i c = -8 a, v ce = -3 v h fe 500 750 100 18000 collector - emitter saturation voltage i c = - 4.0 a, i b = - 16 ma i c = - 8.0 a, i b = - 80 ma v ce(sat) - 2.0 v base - emitter saturation voltage i c = -8 .0 a, i b = - 80 ma v be(sat) - 4.0 v dynamic characteristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short - circuit forward current transfer ratio v ce = - 3.0 v, i c = - 3.0 a, f = 1 mhz |h fe | 25 350 common e mitter small - signal short - circuit forward current trans - ratio v ce = - 3 v, i c = - 3 a, f = 1 khz h fe 300 output capacitance v cb = - 10 v, i e = 0 a, 100 khz f 1 mh z c ob o 2 00 pf (1) pulse test: p ulse w id th = 300 us, duty cycle 2.0 % downloaded from: http:///
t4 - lds -0 310 , rev . 1 ( 8/ 9 /13 ) ?201 3 microsemi corporation page 4 of 6 2n6298 and 2n6299 electrical char acteristics @ t c = 25 o c unless otherwise noted. (continued) switching characteristics parameters / test conditions symbol min. max. unit turn - on time v cc = - 30 v, i c = - 4 a, i b1 = - 16 ma t on 2.0 s turn - off time v cc = - 30 v, i c = - 4 a, i b1 = - 16 ma t off 8.0 s saf e operatin g area (see figures 1 and 2 and mil - std - 750,test method 3053 ) dc tests t c = 25 c +10 oc , t = 1 secon d, 1 cycle test 1 v ce = -8 v, i c = -8 a test 2 v ce = - 20 v, i c = - 2.0 a test 3 v ce = -60 v, i c = - 10 0 ma (2n62 98 ) v ce = -80 v, i c = - 100 ma (2n62 99 ) downloaded from: http:///
t4 - lds -0 310 , rev . 1 ( 8/ 9 /13 ) ?201 3 microsemi corporation page 5 of 6 2n6298 and 2n6299 safe operating area v ce C collector to emitter voltage (volts) figure 1 maximum s afe o perating a rea (d c) l C inductance (millihenries) figure 2 safe o perating a rea for switching between saturation and cutoff (unclamped inductive load) i c = collector current (amperes) i c = collector current (amperes) downloaded from: http:///
t4 - lds -0 310 , rev . 1 ( 8/ 9 /13 ) ?201 3 microsemi corporation page 6 of 6 2n6298 and 2n6299 package dimensions notes: 1 . dimen sio ns are in in ch es. 2 . m illim eters are gi ven for in for ma t io n onl y. 3 . t hes e di me n si ons sh o ul d be me asu red at po in ts 0.050 inch (1.27 mm ) +0. 00 5 in ch (0.13 mm ) -0. 00 0 inc h ( 0.00 mm ) be low sea ting p la ne. w he n g aug e is no t us ed , m easu r em ent w il l be m ad e at the seating pl ane. 4 . two place s. 5 . the seating p lan e of the he ade r sha ll be flat wit hi n 0. 00 1 inch (0.03 mm ) co n ca ve to .004 inc h (0.10 mm) con vex insi de a . 93 0 in ch (2 3. 62 mm) d ia meter ci r cl e on the cen ter of the h ea der and flat wit hi n .001 inch (0.03 mm ) co n ca ve to .006 inch (0.15 mm) c on vex over all . 6 . lead d ia meter sh all no t ex cee d tw ic e l d wit hi n l1 . 7 . lead n um be r 1 is the em itter, lead 2 is the ba se, case is the c oll ector. 8 . in ac co rd an ce wi th asme y 14 .5m, diame ters are eq uival en t to x sy mbo l og y. schematic dim inch millimeters notes min max min max cb 0.470 0.500 11.94 12.70 cd - 0.620 - 15.76 ch 0.250 0.340 6.35 8.64 hr - 0.350 - 8.89 ht 0.050 0.075 1.27 1.91 hr1 0.115 0.145 2.92 3.68 4 ld 0.028 0.034 0.71 0.86 4, 6 ll 0.360 0.500 9.14 12.70 l1 - 0.050 - 1.27 6 mhd 0.142 0.152 3.61 3.86 4 mhs 0.958 0.962 24.33 24.4 3 ps 0.190 0.210 4.83 5.33 3 ps1 0.093 0.107 2.36 2.73 3 s 0.570 0.590 14.48 14.99 t1 base t2 emitter case collector downloaded from: http:///
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